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GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or Power

The transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
https://www.ganwafer.com/product/gan-on-sic-hemt-wafer/ - Details - Similar

GaN on GaN Homoepitaxial Growth with Low Dislocation Density

GaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
https://www.ganwafer.com/product/gan-on-gan/ - Details - Similar

Scientific Publications | InRel-NPower

We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
http://www.inrel-npower.eu/view/biblio/year - Details - Similar

AlGaN / GaN on Silicon HEMT Wafer with High 2DEG Mobility

GaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
https://www.ganwafer.com/product/gan-on-silicon-hemt-wafer/ - Details - Similar

N-Type GaN (Gallium Nitride) Freestanding Substrate Wafer

N-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
https://www.ganwafer.com/product/n-type-freestanding-gan-substrate/ - Details - Similar

Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) Substrate

Semi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
https://www.ganwafer.com/product/semi-insulating-freestanding-gan-substrate/ - Details - Similar

Welcome to InRel-NPower | InRel-NPower

The InRel-NPower project aims to contribute to this world-wide challenge through the development of GaN- and AlN-based power devices. We hope to aid you in your exploration of this topic through our site or at one of the
http://inrel-npower.eu/ - Details - Similar

Our goals | InRel-NPower

The InRel-NPower project researches high voltage GaN and AlN transistors for application in power electronics, from growing the raw material to packaging and a demonstration of its potential in a final device. More in te
http://www.inrel-npower.eu/node/22 - Details - Similar

GaN on Sapphire HEMT Wafer with High Power Density

GaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
https://www.ganwafer.com/product/gan-on-sapphire-hemt-wafer/ - Details - Similar

Freestanding GaN (Gallium Nitride) Substrate Grown by HVPE

Free-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
https://www.ganwafer.com/product-category/gan-wafer/freestanding-gan-substrate/ - Details - Similar

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