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GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
GaN on GaN Homoepitaxial Growth with Low Dislocation DensityGaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
N-Type GaN (Gallium Nitride) Freestanding Substrate WaferN-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
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Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) SubstrateSemi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
Welcome to InRel-NPower | InRel-NPowerThe InRel-NPower project aims to contribute to this world-wide challenge through the development of GaN- and AlN-based power devices. We hope to aid you in your exploration of this topic through our site or at one of the
GaN on Sapphire HEMT Wafer with High Power DensityGaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
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